npn general purpose transistor the LNST3904F3T5G device is a spin ? off of our popular sot ? 23/sot ? 323/sot ? 563/sot ? 963 three ? leaded device. it is designed for general purpose amplifier applications and is housed in the sot ? 1123 surface mount package. this device is ideal for low ? power surface mount applications where board space is at a premium. features ? h fe , 100 ? 300 ? low v ce(sat) , 0.4 v ? reduces board space ? this is a pb ? free device maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 60 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation, t a = 25 c derate above 25 c p d (note 1) 290 2.3 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 432 c/w total device dissipation, t a = 25 c derate above 25 c p d (note 2) 347 2.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 360 c/w thermal resistance, junction ? to ? lead 3 r jl (note 2) 143 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. 100 mm 2 1 oz, copper traces. 2. 500 mm 2 1 oz, copper traces. sot ? 1123 case 524aa style 1 1 LNST3904F3T5G ordering information marking diagram device package shipping ? LNST3904F3T5G sot ? 1123 (pb ? free) 8000/tape & reel 2 = device code m = date code ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 2 3 1 collector 3 1 base 2 emitter 2 m leshan radio company, ltd. 1/4 LNST3904F3T5G
LNST3904F3T5G electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex ? 50 nadc on characteristics (note 3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 ? ? 300 ? ? ? collector ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? 0.2 0.3 vdc base ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 ? 0.85 1.0 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 200 ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 8.0 pf noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 5.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc) t d ? 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) t r ? 35 storage time (v cc = 3.0 vdc, i c = 10 madc) t s ? 275 ns fall time (i b1 = i b2 = 1.0 madc) t f ? 50 3. pulse test: pulse width 300 s; duty cycle 2.0%. 50 0 400 0.0001 1 0.03 i c , collector current (a) figure 1. collector emitter saturation voltage vs. collector current figure 2. dc current gain vs. collector current 0.28 0.0001 0.01 1 i c , collector current (a) 0.08 0.001 0.13 250 300 350 v ce(sat) , collector ? emitter saturation voltage (v) 0.18 0.23 i c /i b = 10 v ce(sat) = 150 c 0.1 0.01 0.001 25 c ? 55 c 200 h fe , dc current gain (v) 150 100 0.1 150 c (5.0 v) 150 c (1.0 v) 25 c (5.0 v) 25 c (1.0 v) ? 55 c (5.0 v) ? 55 c (1.0 v) leshan radio company, ltd. 2/4
figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter turn ? on voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.8 0.9 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 figure 5. saturation region figure 6. input capacitance i b , base current (a) v eb , emitter base voltage (v) 0.01 0.001 0.0001 0 0.2 0.4 0.8 1.0 1.4 1.8 2.0 4.5 4.0 2.5 1.5 2.0 1.0 0.5 0 3.5 4.0 4.5 5.5 6.0 7.0 7.5 8.0 figure 7. output capacitance v cb , collector base voltage (v) 30 25 20 15 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter turn ? on voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) 0.7 i c /i b = 10 ? 55 c 25 c 150 c 0.8 v ce = 2.0 v 25 c 0.6 1.2 1.6 i c = 100 ma 80 ma 60 ma 40 ma 20 ma 3.0 3.5 5.0 5.0 6.5 c ib c ob ? 55 c 150 c 3/4 leshan radio company, ltd. LNST3904F3T5G
package dimensions sot ? 1123 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min nom max millimeters a 0.34 0.37 0.40 b 0.15 0.20 0.25 c 0.07 0.12 0.17 d 0.75 0.80 0.85 e 0.55 0.60 0.65 0.95 1.00 1.05 l 0.05 0.10 0.15 h e 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.002 0.004 0.006 min nom max inches d e b c a l ? y ? ? x ? 0.08 (0.0032) xy h e 0.40 0.30 0.90 dimensions: millimeters soldering footprint* e 0.35 0.014 b1 0.10 0.15 0.20 0.004 0.006 0.008 b1 e 0.35 0.25 1 2 3 style 1: pin 1. base 2. emitter 3. collector leshan radio company, ltd. 4/4 l nst3904f3t5g
|
